Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine.
Identifieur interne : 000C01 ( Main/Exploration ); précédent : 000C00; suivant : 000C02Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine.
Auteurs : RBID : pubmed:23035427Abstract
Thin films of cobalt phthalocyanine (CoPc) were deposited onto solid substrates through physical vapor deposition (PVD) by thermal evaporation up to 60 nm thick to determine their molecular architecture and electrical properties. The growth was monitored using UV-Vis absorption spectroscopy, revealing a linear increase for absorbance versus thickness. PVD films were found in the crystalline alpha phase and with the CoPc molecules forming ca. 45 degrees in relation to the substrate surface. The film surface was fairly homogeneous at the micro and nanoscales, with the roughness at ca. 3 nm. DC and AC electrical measurements were carried out for devices built with distinct structures. Perpendicular contact was established by depositing 60 nm CoPc PVD films between indium tin oxide (ITO) and Al, forming a sandwich-type structure (ITO/CoPc/Al). The current versus DC voltage curve indicated a Schottky diode behavior with a rectification factor of 4.2. The AC conductivity at low frequencies increased about 2 orders of magnitude (10(-9) to 10(-7) S/m) with increasing DC bias (0 to 5 V) and the dielectric constant at 1 kHz was 3.45. The parallel contact was obtained by depositing 120 nm CoPc PVD film onto interdigitated electrodes, forming an IDE-structured device. The latter presented a DC conductivity of 5.5 x 10(-10) S/m while the AC conductivity varied from 10(-9) to 10(-1) S/m between 1 Hz and 1 MHz, respectively, presenting no dependence on DC bias. As proof-of-principle, the IDE-structured device was applied as gas sensor for trifluoroacetic acid (TFA).
PubMed: 23035427
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine.</title><author><name sortKey="Alessio, P" uniqKey="Alessio P">P Alessio</name><affiliation wicri:level="1"><nlm:affiliation>DFQB, Faculdade de Ciências e Tecnologia, UNESP Univ Estadual Paulista, Presidente Prudente, SP 19060-900, Brazil.</nlm:affiliation><country xml:lang="fr">Brésil</country><wicri:regionArea>DFQB, Faculdade de Ciências e Tecnologia, UNESP Univ Estadual Paulista, Presidente Prudente, SP 19060-900</wicri:regionArea></affiliation></author><author><name sortKey="De Oliveira, R F" uniqKey="De Oliveira R">R F de Oliveira</name></author><author><name sortKey="Aoki, P H B" uniqKey="Aoki P">P H B Aoki</name></author><author><name sortKey="Pereira, J D A S" uniqKey="Pereira J">J D A S Pereira</name></author><author><name sortKey="Braunger, M L" uniqKey="Braunger M">M L Braunger</name></author><author><name sortKey="Furini, L N" uniqKey="Furini L">L N Furini</name></author><author><name sortKey="Vieira, M" uniqKey="Vieira M">M Vieira</name></author><author><name sortKey="Teixeira, S R" uniqKey="Teixeira S">S R Teixeira</name></author><author><name sortKey="Job, A E" uniqKey="Job A">A E Job</name></author><author><name sortKey="Saenz, C A T" uniqKey="Saenz C">C A T Saenz</name></author><author><name sortKey="Alves, N" uniqKey="Alves N">N Alves</name></author><author><name sortKey="Olivati, C A" uniqKey="Olivati C">C A Olivati</name></author><author><name sortKey="Constantino, C J L" uniqKey="Constantino C">C J L Constantino</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="RBID">pubmed:23035427</idno><idno type="pmid">23035427</idno><idno type="wicri:Area/Main/Corpus">000A11</idno><idno type="wicri:Area/Main/Curation">000A11</idno><idno type="wicri:Area/Main/Exploration">000C01</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of cobalt phthalocyanine (CoPc) were deposited onto solid substrates through physical vapor deposition (PVD) by thermal evaporation up to 60 nm thick to determine their molecular architecture and electrical properties. The growth was monitored using UV-Vis absorption spectroscopy, revealing a linear increase for absorbance versus thickness. PVD films were found in the crystalline alpha phase and with the CoPc molecules forming ca. 45 degrees in relation to the substrate surface. The film surface was fairly homogeneous at the micro and nanoscales, with the roughness at ca. 3 nm. DC and AC electrical measurements were carried out for devices built with distinct structures. Perpendicular contact was established by depositing 60 nm CoPc PVD films between indium tin oxide (ITO) and Al, forming a sandwich-type structure (ITO/CoPc/Al). The current versus DC voltage curve indicated a Schottky diode behavior with a rectification factor of 4.2. The AC conductivity at low frequencies increased about 2 orders of magnitude (10(-9) to 10(-7) S/m) with increasing DC bias (0 to 5 V) and the dielectric constant at 1 kHz was 3.45. The parallel contact was obtained by depositing 120 nm CoPc PVD film onto interdigitated electrodes, forming an IDE-structured device. The latter presented a DC conductivity of 5.5 x 10(-10) S/m while the AC conductivity varied from 10(-9) to 10(-1) S/m between 1 Hz and 1 MHz, respectively, presenting no dependence on DC bias. As proof-of-principle, the IDE-structured device was applied as gas sensor for trifluoroacetic acid (TFA).</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23035427</PMID><DateCreated><Year>2012</Year><Month>10</Month><Day>05</Day></DateCreated><DateCompleted><Year>2012</Year><Month>10</Month><Day>24</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Print">1533-4880</ISSN><JournalIssue CitedMedium="Print"><Volume>12</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Sep</Month></PubDate></JournalIssue><Title>Journal of nanoscience and nanotechnology</Title><ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation></Journal><ArticleTitle>Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine.</ArticleTitle><Pagination><MedlinePgn>7010-20</MedlinePgn></Pagination><Abstract><AbstractText>Thin films of cobalt phthalocyanine (CoPc) were deposited onto solid substrates through physical vapor deposition (PVD) by thermal evaporation up to 60 nm thick to determine their molecular architecture and electrical properties. The growth was monitored using UV-Vis absorption spectroscopy, revealing a linear increase for absorbance versus thickness. PVD films were found in the crystalline alpha phase and with the CoPc molecules forming ca. 45 degrees in relation to the substrate surface. The film surface was fairly homogeneous at the micro and nanoscales, with the roughness at ca. 3 nm. DC and AC electrical measurements were carried out for devices built with distinct structures. Perpendicular contact was established by depositing 60 nm CoPc PVD films between indium tin oxide (ITO) and Al, forming a sandwich-type structure (ITO/CoPc/Al). The current versus DC voltage curve indicated a Schottky diode behavior with a rectification factor of 4.2. The AC conductivity at low frequencies increased about 2 orders of magnitude (10(-9) to 10(-7) S/m) with increasing DC bias (0 to 5 V) and the dielectric constant at 1 kHz was 3.45. The parallel contact was obtained by depositing 120 nm CoPc PVD film onto interdigitated electrodes, forming an IDE-structured device. The latter presented a DC conductivity of 5.5 x 10(-10) S/m while the AC conductivity varied from 10(-9) to 10(-1) S/m between 1 Hz and 1 MHz, respectively, presenting no dependence on DC bias. As proof-of-principle, the IDE-structured device was applied as gas sensor for trifluoroacetic acid (TFA).</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Alessio</LastName><ForeName>P</ForeName><Initials>P</Initials><Affiliation>DFQB, Faculdade de Ciências e Tecnologia, UNESP Univ Estadual Paulista, Presidente Prudente, SP 19060-900, Brazil.</Affiliation></Author><Author ValidYN="Y"><LastName>de Oliveira</LastName><ForeName>R F</ForeName><Initials>RF</Initials></Author><Author ValidYN="Y"><LastName>Aoki</LastName><ForeName>P H B</ForeName><Initials>PH</Initials></Author><Author ValidYN="Y"><LastName>Pereira</LastName><ForeName>J D A S</ForeName><Initials>JD</Initials></Author><Author ValidYN="Y"><LastName>Braunger</LastName><ForeName>M L</ForeName><Initials>ML</Initials></Author><Author ValidYN="Y"><LastName>Furini</LastName><ForeName>L N</ForeName><Initials>LN</Initials></Author><Author ValidYN="Y"><LastName>Vieira</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Teixeira</LastName><ForeName>S R</ForeName><Initials>SR</Initials></Author><Author ValidYN="Y"><LastName>Job</LastName><ForeName>A E</ForeName><Initials>AE</Initials></Author><Author ValidYN="Y"><LastName>Saenz</LastName><ForeName>C A T</ForeName><Initials>CA</Initials></Author><Author ValidYN="Y"><LastName>Alves</LastName><ForeName>N</ForeName><Initials>N</Initials></Author><Author ValidYN="Y"><LastName>Olivati</LastName><ForeName>C A</ForeName><Initials>CA</Initials></Author><Author ValidYN="Y"><LastName>Constantino</LastName><ForeName>C J L</ForeName><Initials>CJ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Nanosci Nanotechnol</MedlineTA><NlmUniqueID>101088195</NlmUniqueID><ISSNLinking>1533-4880</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>10</Month><Day>6</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>10</Month><Day>6</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>10</Month><Day>6</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">23035427</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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